SciSight Ecosystem
WoS SCIE Q3Scopus Q2SCImago #12,987CAS 3区Hybrid

IEEE Transactions on Device and Materials Reliability

Abbreviation (ISO):IEEE TRANS. DEVICE MATER. RELIAB
Country: United States•WoS SCIE Quartile: Q3•Scopus SJR: 0.451•SCImago Rank: #12,987•Identifier (ISSN):1530-4388(Print)•Articles / Year: 80•Estimated Publication Fee (APC): $2,880 USD
Clarivate IF (2026)Q3
2.7
↑ +0.4

Leading citation impact metric from Clarivate Journal Citation Reports

JCR Release Date: 2026-06-17
H-Index (2021)
63

63 papers with at least that number of citations each

WoS: SCIE / JCRQ3
Self-Citation Rate4%
Safe Level (< 15%)Warning Level (> 20%)
Self-citation below 15% indicates strong scholarly independence.
Volume & Open AccessHybrid
80articles/year
1.55% Gold OA•98.21% Original Research

State Council for Professorship (HĐGSNN) Scoring

Quyết định số 26/QĐ-HĐGSNN ngày 11/7/2025 (Mục quốc tế)

1.75pts
Latest Max Score
Estimated (Dec 26)
Scoring Basis: WoS Q2 có IF ≥ 2.0(IF: 2.7)

HĐGSNN Score History

By article publication year
YearMax ScoreEvaluation DetailsSource
20261.75đ
WoS Q2 có IF ≥ 2.0(IF: 2.7)
🔵 Computed
20251.75đ
WoS Q2 có IF ≥ 2.0(IF: 2.3)
🔵 Computed
20241.75đ
WoS Q2 có IF ≥ 2.0(IF: 2.5)
🔵 Computed
20231.75đ
WoS Q2 có IF ≥ 2.0(IF: 2)
🔵 Computed
20221.50đ
WoS Q2(IF: 1.886)
🔵 Computed
20211.50đ
WoS Q2(IF: 1.761)
🔵 Computed
20201.50đ
WoS Q2(IF: 1.407)
🔵 Computed
20191.50đ
WoS Q2(IF: 1.583)
🔵 Computed
20181.50đ
WoS Q2(IF: 1.512)
🔵 Computed

Note: Domestic journal scores are officially collected from annual HĐGSNN decisions across councils. International journal scores are dynamically computed according to Decision 26/QĐ-HĐGSNN based on quartile and citation metrics in the publication year.

Aims & Scope

The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.

Topics Covered (Recognized by AI)
Engineering94.6%Physics84.3%Materials science83.5%Electrical engineering77.1%Quantum mechanics75.3%Computer science70.6%Optoelectronics54.7%Thermodynamics48.7%Electronic engineering46.9%Chemistry42.7%Voltage38.5%Composite material37%Organic chemistry34.8%Power (physics)34.6%Nanotechnology28%Reliability (semiconductor)27.8%Telecommunications26%Metallurgy25.8%Transistor25.6%Reliability engineering25.2%Mathematics23.8%Operating system21.9%

SCImago & Scopus Journal Intelligence

Global SCImago ranking, SJR prestige index, Scopus coverage, and societal policy impact

Rank #12,987Scopus Q2SCImago Profile
Scopus Coverage:2001-2026
Scopus Broad Areas:EngineeringMaterials Science
Scopus Citation Rank (SJR)Q2
0.451

Weighted prestige citation metric per document indexed in the Scopus database.

Tứ phân vị: Scopus Q2
Scopus H-Index (2025)
85

Measures cumulative publication volume and citation impact.

Scopus Database Indexed (2025)
Citations / Doc (2 years)
2.80

Average citations received per document published in the 2-year window.

2-Year Citation Window
Estimated Publication Fee (APC)
$2,880 USD

Estimated Article Processing Charge for Open Access publication.

Chi phí ước tính / bài báo

Scopus 3-Year Publication & Citation Window

3-Year Citations625
3-Year Documents210
Citable Documents205

Aggregated from Scopus database across the 3-year SJR evaluation window.

Societal Impact & Inclusivity (SCImago)

Policy Citations (Overton)0

Citations in government and international policy documents

Female Author Rate26.8%

Percentage of female authors published in the journal

Real-world societal policy reach and author gender diversity tracked by SCImago.

Scopus Subject Categories

Electrical and Electronic EngineeringQ2
Safety, Risk, Reliability and QualityQ2
Electronic, Optical and Magnetic MaterialsQ3

Chinese Academy of Sciences (CAS) Classification

Major / minor zone classification and CAS Early Warning List history

Major Category (Broad Field):
3区 (Zone 3)Engineering & Technology
Minor Category (Specific Field):
3区ENGINEERING, ELECTRICAL & ELECTRONIC
CAS Early Warning List History:
Updated annually: 2020 – 2024
2020
Not warned
2021
Not warned
2022
Not warned
2023
Not warned
2024
Not warned

Publishing & Editorial Information

Detailed publisher, peer-review turnaround, and publication cycle specifications

Publisher Review Speed
Updating
Average time to first editorial decision
Online Publication Speed
Updating
Time from acceptance to online publication
Official Acceptance Rate
Updating
Manuscript acceptance rate confirmed by the publisher
Open Access Model
Hybrid
OA publishing option or traditional subscription
Publisher
Institute of Electrical and Electronics Engineers Inc.
Publication Language
English
Frequency
Quarterly
Editorial Address
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
Indexing & Databases
SCIEScopusPubMed

WoS Categories & Quartiles

Detailed JCR / JCI category rankings and quartile breakdown from Clarivate

Clarivate JCR & JCI
CategoryIndexRankQuartile
ENGINEERING, ELECTRICAL & ELECTRONIC
JCRSCIE
186/369Q3
PHYSICS, APPLIED
JCRSCIE
107/191Q3
ENGINEERING, ELECTRICAL & ELECTRONIC
JCISCIE
193/371Q3
PHYSICS, APPLIED
JCISCIE
93/191Q2

Annual Historical Statistics & Publications

Track annual publication volume, total citations, and Impact Factor evolution

12 year
YearImpact FactorArticles / YearTotal Citations
2026—11298
20252.3151231
20242.5109479
20232102629
20221.88696767
20211.7611201,198
20201.4071221,365
20191.5831261,662
20181.5121041,529
2017—1221,704
2016—1402,210
2015—1121,518
Academic Metric Intelligence

Journal Metrics & Citation Visualizations

Impact Factor Trend (2018–2024)

Clarivate IF trend for IEEE Transactions on Device and Materials Reliability

WoS Q3
0123201820192020202120222023202420252.30
Annual Impact Factor Metric
2025:2.3

Total Cites vs Self-Cites

Evaluation of scholarly independence and citation reach

Total citations steady growth
Self-citation: 4%

Citations per Document

Citation metric windows across 2, 3, and 4 years

Cites / Doc (4 years)Cites / Doc (3 years)Cites / Doc (2 years)

Similar Journals in Discipline

Journals in the same research field with comparable impact metrics

Record UUID: 34c6f5ff-82c3-40ca-926a-a9b48d722c55
Database Updated: 2026-09-28